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| MWI 200-06 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 225 A = 600 V VCES VCE(sat) typ. = 2.0 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 1.5 ; TVJ = 125C Clamped inductive load; L = 100 H Conditions TVJ = 25C to 150C Maximum Ratings 600 20 225 155 ICM = 400 VCEK VCES 10 675 V V A A A s W Features * NPT IGBT technology * low saturation voltage * low switching losses * switching frequency up to 30 kHz * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate Advantages TC = 25C * space savings * reduced protection circuits * package designed for wave soldering Typical Applications * AC motor control * AC servo and robot drives * power supplies VCE = VCES; VGE = 15 V; RG = 1.5 ; TVJ = 125C non-repetitive Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 1.5 400 180 50 300 40 4.6 6.3 9.0 670 2.5 6.5 1.8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.18 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 200 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 200 A VGE = 15 V; RG = 1.5 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 200 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-4 448 MWI 200-06 A8 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 260 165 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 200 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 120 A; diF/dt = -1000 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.9 1.5 56 100 2.1 V V A ns 0.3 K/W Thermal Response IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.1 V; R0 = 6 m Free wheeling Diode (typ. at TJ = 125C) V0 = 1.1 V; R0 = 2 m Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 C C C V~ Nm IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.131 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W Free wheeling Diode (typ.) Cth1 = 0.281 J/K; Rth1 = 0.236 K/W Cth2 = 1.945 J/K; Rth2 = 0.064 K/W IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Characteristic Values min. typ. max. 1.8 m mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") (c) 2004 IXYS All rights reserved 2-4 448 MWI 200-06 A8 300 A VGE = 17 V TVJ = 25C 13 V 11 V 250 IC 15 V 300 A 250 IC 200 150 TVJ = 125C VGE = 17 V 13 V 11 V 15 V 200 150 100 50 0 0 1 2 VCE 9V 9V 100 50 0 3 V 4 0 1 2 VCE 3 V 4 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 400 A VCE = 20 V 600 A 500 IF 400 IC 300 200 TVJ = 125C 300 TVJ = 125C 200 100 100 TVJ = 25C TVJ = 25C 0 6 7 8 9 10 VGE 0 11 V 12 0 1 VF 2 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 15 V 180 VCE = 300 V IC = 200 A 12 VGE A trr 120 trr TVJ = 125C VR = 300 V IF = 120 A IRM ns 40 IRM 9 6 60 3 0 0 100 200 300 400 500 QG 20 0 600 nC 700 0 200 400 600 -di/dt MWI200-06A8 0 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2004 IXYS All rights reserved 3-4 448 MWI 200-06 A8 16 mJ Eon VCE = 300 V VGE = 15 V RG = 1.5 TVJ = 125C 16 mJ Eoff 12 VCE = 300 V VGE = 15 V RG = 1.5 TVJ = 125C 12 8 8 4 4 0 0 100 200 IC 0 300 A 400 0 100 200 300 IC A 400 Fig. 7 Typ. turn on energy versus collector current Fig. 8 Typ. turn off energy versus collector current 20 mJ Eon 8 VCE = 300 V VGE = 15 V IC = 200 TVJ = 125C 16 12 8 mJ Eoff 6 VCE = 300 V VGE = 15 V IC = 200 TVJ = 125C 4 4 0 0 4 8 12 RG 16 20 2 0 4 8 12 RG 16 20 Fig. 9 Typ. turn on energy versus gate resistor Fig.10 Typ. turn off energy versus gate resistor 500 A 1 K/W 0.1 ZthJC 0.01 diode IGBT 400 ICM 300 200 100 0 0 100 200 300 400 500 600 VCE RG = 1.5 TVJ = 125C 0.001 single pulse 700 V 0.0001 0.0001 MWI200-06A8 0.001 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance 448 (c) 2004 IXYS All rights reserved 4-4 |
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